SSD Built for Cloud Storage Architectures

3.2TB, Intel 64-layer TLC Intel 3D NAND Technology

Enhanced Power Loss Data Protection, 256-bit AES

Enhanced SMART monitoring of drive health & status

Designed for high-density storage deployments

Hyperscale, IoT, and big data analytics Applications

Power loss protection (PLP) and end-to-end data correction

Single-port design, optimized for data center class workloads

High-performance Desktop PCs

Thin-performance Notebook PCs

3D TLC (3-bit-per-cell) flash memory

Server-boot, caching & logging use in Data center

Optimized for heavy multi-threaded workloads

Advanced ECC Engine and End-to-End Data Protection

Read-intensive SSD from Samsung using TLC flash technology

Supports Self-Monitoring, Analysis and Reporting Technology (S.M.A.R.T)

Samsung V6 (128 layers) V-NAND TLC

High storage capacity that delivers on performance

Greater reliability with advanced V-NAND technology

Mainstream use, and is suitable for the web, applications

PCIe 5.0, NVMe 2.0 specification compliant

Dual-port design for high-availability applications

High performance with lower power consumption

Business intelligence, Data warehousing Applications

Lower annualized failure rates (AFR) for fewer drive replacements

Compatible with existing SATA setups for an easy storage upgrade

Firmware completes updates without server reset, reducing downtime

Consistently delivers durable performance to optimize service level continuity

Featuring 96-layer BiCS FLASHTM 3D TLC memory

Deliver 1DWPD (Drive Writes Per Day) of endurance

Power loss protection (PLP) and end-to-end data protection

Optimized to support a broad range of enterprise applications

Designed for high-density storage deployments

Power loss protection (PLP) and end-to-end data correction

Streaming media and content delivery networks Applications

Consistent performance, reliability for demanding 24x7 environments

Marvell NAND controller and SLC NAND Flash

Features TRIM, NCQ, and S.M.A.R.T. In addition

Innodisk SATADOM-ML 3SE4 is designed for industrial field

Low Density Parity Check, Real-time wear leveling algorithm

Excellent data transfer speed

Zero mechanical interference

Intelligent error recovery system

Anti-vibration mechanical design

Samsung V6 (128 layers) V-NAND TLC

High storage capacity that delivers on performance

Greater reliability with advanced V-NAND technology

Mainstream use, and is suitable for the web, applications

Offers up to 10 percent lower latency

Samsung V6 (128 Layer) speed is 33% faster

Tremendous performance for Read-Intensive data

3D TLC NAND Flash, LDPC ECC engine supported 

Supports PCIe Gen III x 4, compliant with NVM 1.3

Embedded AES-256 bit engine, Hybrid Write Mode

Western Digital 96-Layer 3D TLC NAND

Enterprise reliability MTBF of 2.5M hours

Virtualization, Pattern recognition, Applications

Instant Secure Erase (ISE) with an AES-256 encryption

Western Digital 96-Layer 3D TLC NAND

Enterprise reliability MTBF of 2.5M hours

Virtualization, Pattern recognition, Applications

Instant Secure Erase (ISE) with an AES-256 encryption

Western Digital 96-Layer 3D TLC NAND

Enterprise reliability MTBF of 2.5M hours

Virtualization, Pattern recognition, Applications

Secure Erase (SE) with an AES-256 encryption

Western Digital 96-Layer 3D TLC NAND

Enterprise reliability MTBF of 2.5M hours

Virtualization, Pattern recognition, Applications

Secure Erase (SE) with an AES-256 encryption

Suitable for mainstream read-intensive applications

Ideal for high reliability, low power server boot drives

Samsung V6 (128 Layer) TLC, 256-bit encryption engine

Power loss protection, Write endurance levels of 1.3 DWPD

Low latency for responsiveness under load

Ultra-high endurance for today's data center

High throughput for breakthrough performance

Predictably fast service for Quality of Service (QoS)